1/10 january 2003 new datasheet according to pcn dsg/ct/2c13 marking: p80nf55l-06 @ b80nf55l-06 @ STB80NF55L-06 stp80nf55l-06 n-channel 55v - 0.005 w - 80a d 2pak/to-220 stripfet? ii power mosfet n typical r ds (on) = 0.005 w n low threshold drive n logic level device n surface-mounting d 2 pak (to-263) power package in tube (no suffix) or in tape & reel (suffix t4) description this power mosfet is the latest development of stmicroelectronis unique "single feature size?" strip-based process. the resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. applications n high current, high speed switching n solenoid and relay drivers n motor control, audio amplifiers n dc-dc & dc-ac converters n automotive type v dss r ds(on) i d STB80NF55L-06 stp80nf55l-06 55 v 55 v < 0.0065 w < 0.0065 w 80 a 80 a 1 2 3 1 3 to-220 d 2 pak to-263 (suffix t4) absolute maximum ratings (# ) current limited by the package ( ) pulse width limited safe operating area (1) i sd 80a, di/dt 400a/s, v dd v (br)dss , t j t jmax (2) starting t j = 25 o c, i d = 40a, v dd = 35v symbol parameter value unit v ds drain-source voltage (v gs = 0) 55 v v dgr drain-gate voltage (r gs = 20 k w ) 55 v v gs gate- source voltage 16 v i d (#) drain current (continuous) at t c = 25c 80 a i d drain current (continuous) at t c = 100c 80 a i dm ( ) drain current (pulsed) 320 a p tot total dissipation at t c = 25c 300 w derating factor 2 w/c dv/dt (1) peak diode recovery voltage slope 7 v/ns e as (2) single pulse avalanche energy 1.3 j t stg storage temperature -55 to 175 c t j operating junction temperature internal schematic diagram
STB80NF55L-06 stp80nf55l-06 2/10 thermal data electrical characteristics (t case = 25 c unless otherwise specified) off on (* ) dynamic rthj-case rthj-amb t l thermal resistance junction-case thermal resistance junction-ambient maximum lead temperature for soldering purpose max max 0.5 62.5 300 c/w c/w c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 55 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 125c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 16 v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 a 1v r ds(on) static drain-source on resistance v gs = 10 v i d = 40 a v gs = 5 v i d = 40 a 0.005 0.0055 0.0065 0.008 w w symbol parameter test conditions min. typ. max. unit g fs (*) forward transconductance v ds = 15 v i d = 40 a 150 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v f = 1 mhz v gs = 0 4850 1040 375 pf pf pf
3/10 STB80NF55L-06 stp80nf55l-06 switching on switching off source drain diode (*) pulsed: pulse duration = 300 s, duty cycle 1.5 %. ( ) pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 27 v i d = 40 a r g = 4.7 w v gs = 4.5 v (resistive load, figure 3) 32 180 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 44v i d = 80a v gs = 5v 100 18 53 136 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 27 v i d = 40 a r g = 4.7 w, v gs = 4.5 v (resistive load, figure 3) 135 80 ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 80 320 a a v sd (*) forward on voltage i sd = 80 a v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 80 a di/dt = 100a/s v dd = 25 v t j = 150c (see test circuit, figure 5) 100 310 6.2 ns nc a electrical characteristics (continued) safe operating area thermal impedance
STB80NF55L-06 stp80nf55l-06 4/10 output characteristics transfer characteristics transconductance static drain-source on resistance gate charge vs gate-source voltage capacitance variations
5/10 STB80NF55L-06 stp80nf55l-06 . . normalized gate threshold voltage vs temperature normalized on resistance vs temperature source-drain diode forward characteristics normalized breakdown voltage vs temperature. . .
STB80NF55L-06 stp80nf55l-06 6/10 fig. 1: unclamped inductive load test circuit fig. 1: unclamped inductive load test circuit fig. 2: unclamped inductive waveform fig. 3: switching times test circuits for resistive load fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times
7/10 STB80NF55L-06 stp80nf55l-06 dim. mm. inch. min. typ. max. min. typ. typ. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.028 0.037 b2 1.14 1.7 0.045 0.067 c 0.45 0.6 0.018 0.024 c2 1.21 1.36 0.048 0.054 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.394 0.409 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.591 0.624 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.069 m 2.4 3.2 0.094 0.126 r 0.4 0.015 v2 0 8 0 8 d 2 pak mechanical data
STB80NF55L-06 stp80nf55l-06 8/10 dim. mm. inch. min. typ. max. min. typ. typ. a 4.4 4.6 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.40 2.70 0.094 0.106 h2 10 10.40 0.393 0.409 l2 16.40 0.645 l3 28.90 1.137 l4 13 14 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.20 6.60 0.244 0.260 l9 3.50 3.93 0.137 0.154 dia 3.75 3.85 0.147 0.151 to-220 mechanical data
9/10 STB80NF55L-06 stp80nf55l-06 dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0075 0.082 r50 1.574 t 0.25 0.35 .0.0098 0.0137 w 23.7 24.3 0.933 0.956 dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data * on sales type tube shipment (no suffix)* tape and reel shipment (suffix t4)* d 2 pak footprint tape mechanical data
STB80NF55L-06 stp80nf55l-06 10/10 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is registered trademark of stmicroelectronics a 2002 stmicroelectronics - all rights reserved all other names are the property of their respective owners. stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com
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